The growth of compound semiconductor crystals
Compound semiconductor is known as the second generation of semiconductor materials, compared with the first generation of semiconductor materials, with optical transition, high electron saturation drift rate and high temperature resistance, radiation resistance and other characteristics, in ultra-high speed, ultra-high frequency, low power, low noise thousands and circuits, especially optoelectronic devices and photoelectric storage has unique advantages, the most representative of which is GaAs and InP.
The growth of compound semiconductor single crystals (such as GaAs, InP, etc.) requires extremely strict environments, including temperature, raw material purity and growth vessel purity. PBN is currently an ideal vessel for the growth of compound semiconductor single crystals. At present, the compound semiconductor single crystal growth methods mainly include liquid seal direct pull method (LEC) and vertical gradient solidification method (VGF), corresponding to Boyu VGF and LEC series crucible products.
In the process of polycrystalline synthesis, the container used to hold elemental gallium needs to be free of deformation and cracking at high temperature, requiring high purity of the container, no introduction of impurities, and long service life. PBN can meet all of the above requirements and is an ideal reaction vessel for polycrystalline synthesis. Boyu PBN boat series has been widely used in this technology.
