Molecular Beam Epitaxy

Molecular beam epitaxy (MBE) is one of the most important semiconductor crystal epitaxial growth processes of group III.-V and group II.-VI. in the world today.

It is a method of growing thin films layer by layer along the crystal axis of the substrate material under appropriate substrate and suitable conditions.

The bundle source crucibles used in MBE need to have high temperature resistance, high purity, long service life, etc., and PBN materials can fully meet the above requirements, and are used as an ideal container for evaporating elements and compounds in the MBE process. Boyu closely follows the development of this technology, and designs and develops MBE series crucibles that can be used with international mainstream MBE equipment.