Vacuum Components

Heat treatment mainly includes oxidation, diffusion and annealing processes. Oxidation is an additive process in which silicon wafers are placed in a high-temperature furnace and oxygen is added to react with them to form silica on the surface of the wafer. Diffusion is to move substances from the high concentration area to the low concentration region through molecular thermal movement, and the diffusion process can be used to dope specific doping substances in the silicon substrate, thereby changing the conductivity of semiconductors.